Apparatus and method for detecting and analyzing spectral components in predetermined frequency bands within a signal, frequency filter, and related computer-readable media

ABSTRACT

An apparatus for detecting spectral components in a predetermined frequency band within a signal includes first and second processing devices and first, second, and third connectors tuned to the frequency band. The first processing device includes first, second, and third elements. The second processing device includes fourth, fifth, and sixth elements. The first connector is coupled to the first and fourth elements, the second connector to the second and fifth elements, and the third connector to the third and sixth elements. An apparatus for analyzing spectral components in predetermined frequency bands within a signal includes an input for receiving the signal, a device for isolating a portion of the signal, and frequency detectors coupled in parallel to the device. Each frequency detector corresponds to a frequency band and generates an output signal component corresponding to a proportion of energy of the spectral components detected by the frequency detector.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit under 35 U.S.C. § 119(e) based onprovisional application No. 60/482,512, filed Jun. 25, 2003, in the U.S.Patent and Trademark Office, the content of which is relied upon andincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to automatic Fourier analyzer circuits andalso to automatic Fourier analyzer circuits using electronic neuralloops to conduct waveform analyses.

2. Description of the Related Art

Signal waveform analysis has been performed mathematically through thetechnique of Fourier analysis. In this type of analysis, a signalwaveform is represented as a mathematical function. The function is thenmanipulated to produce a series of amplitudes at various frequencies.The amplitudes and frequency patterns are representative of the signalwaveform. Although Fourier analysis has been used for many years, it isoften a difficult analysis to perform. Computers can help, but acomputer often cannot perform the initial representation of the waveformas a function. Moreover, although many basic types of waveforms havebeen analyzed, waveforms that are more complex often have to be analyzedby breaking them down into simpler parts.

SUMMARY OF THE INVENTION

An Electronic Neural Loop (“ENL”) is a tuned circuit designed to producean output voltage only when a signal containing the frequency to whichthat ENL is tuned appears.

An ENL typically comprises first and second processing devices andfirst, second, and third connectors. The first processing devicecomprises first, second, and third elements. The second processingdevice comprises fourth, fifth, and sixth elements. The first connectoris coupled to the first and fourth elements, the second connector iscoupled to the second and fifth elements, and the third connector iscoupled to the third and sixth elements. Each connector is tuned to apredetermined frequency band.

The first and/or second processing devices may comprise, for example,electrochemical or semiconductor devices. At least one of the connectorsmay comprise, for example, an ohmic connection, a waveguide, anintegrated circuit conducting connection, or an integrated circuitsemiconducting connection. At least one of the semiconductor devices maycomprise, for example, a transistor, a field effect transistor, acomplementary metal-oxide semiconductor, a bipolar junction transistor,an NPN transistor, or a PNP transistor. The first, second, and thirdelements may, for example, be a base, collector, and emitter of atransistor.

An ENL may be used, for example, to detect one or more spectralcomponents in a predetermined frequency band within a signal.

An Automatic Fourier Analyzer (“AFA”) is a circuit designed to producecurrent or voltage amplitudes for a number of frequencies that are foundin an input signal waveform. Thus, an AFA receives an input signal andautomatically produces an output that is a true Fourier analysis of thesignal. This output is initially in analog form and can be viewed as aset of amplitudes and frequencies, or it can be digitized and consideredas a digital word (or code) that describes the given signal. Ifdigitized, the codes are then usable with digital databases.

An AFA can comprise a number of ENLs connected in parallel so that as acomplicated signal is fed into the AFA, every ENL that finds its tunedfrequency as a component of the input signal produces an output currentand/or voltage. This output current and/or voltage is proportional tothe current and/or voltage level for a given frequency, as developed inany Fourier analysis. By having a number of ENLs tuned to differentfrequencies, complicated signals can be analyzed quickly andautomatically. An AFA can be made as accurate and reliable as desired byincluding in its design enough ENLs to cover the entire input frequencyrange, effectively with almost any desired bandwidth for a given ENL.

Because of its automatic operational feature, an AFA needs noprogramming to generate unique, serialized data codes—like thecombination of a combination lock—that can be used as an address fordatabases. This is contrasted with the Fourier analyses currently used,which rely on very large, complex—and expensive—pattern recognitionalgorithms with concomitant software. The AFA thus performs a givenfunction, in this case a Fourier transform, of a data field much lessexpensively, much faster, and much more reliably than the currentapproaches allow.

An AFA typically comprises an input for receiving the input signal, adevice coupled to the input for isolating a portion of the input signalextending over a discrete time period, and a plurality of frequencydetectors each coupled in parallel to the device. Each frequencydetector corresponds to one of the frequency bands and typicallycomprises first and second processing devices and first, second, andthird connectors. The first processing device comprises first, second,and third elements. The second processing device comprises fourth,fifth, and sixth elements. The first connector is coupled to the firstand fourth elements, the second connector is coupled to the second andfifth elements, and the third connector is coupled to the third andsixth elements. Each connector is tuned to a respective frequency bandand generates an output signal component corresponding to a proportionof energy of the spectral component or components detected by thefrequency detector to the total energy of the input signal portion. Thefirst and/or second processing devices may comprise, for example,electrochemical or semiconductor devices.

An AFA may be used, for example, to analyze detected spectral componentsin predetermined frequency bands within an input signal.

As noted above, an AFA may comprise a number of ENLs connected inparallel. Those ENLs may comprise a transistor pair, where thetransistors are connected by “wires” that are specifically sized to actas active components in the ENL, tuning the ENL. This allows the ENL tooperate only on a narrow band of frequencies. When the AFA receives aninput signal, the ENLs that encounter frequency components matchingtheir tuning are “turned on” and produce an output current and/orvoltage. This happens automatically and virtually instantaneously. Onceall of ENLs that see frequency components have been “turned on,” theoutput is a set of currents and/or voltages for a specific set offrequencies. The AFA's analog output can be plotted to produce a Fourierseries expansion instantly. In addition or in the alternative, theoutput can be digitized to produce a digital data word that can be usedin any number of ways.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a representational view of an exemplary embodiment of anAutomatic Fourier Analyzer;

FIG. 2 is a schematic diagram of a first exemplary embodiment of an ENL;

FIG. 3 is a front perspective view of a second exemplary embodiment ofan ENL, showing a first connector coupled to the collectors of twotransistors;

FIG. 4 is a top view of the second exemplary embodiment of an ENL,showing the first connector coupled to the collectors of the twotransistors and a second connector coupled to the emitters of the twotransistors;

FIG. 5 is a right-side view of the second exemplary embodiment of anENL, showing the first connector coupled to the collectors of the twotransistors and the second connector coupled to the emitters of the twotransistors;

FIG. 6 is a diagram of a typical NPN transistor;

FIG. 7 is a diagram of a typical PNP transistor;

FIG. 8 is a typical family of transistor operating curves;

FIG. 9 is a table comparing orbit radius in nanometers, impliedwavelength, and implied frequency;

FIG. 10 is a table comparing orbit radius in meters, implied wavelength,and implied frequency;

FIG. 11 is a table comparing orbit radius in nanometers, insidewavelength, and outside wavelength at a 10 nm feature size;

FIG. 12 is a table comparing orbit radius in nanometers, insidewavelength, and outside wavelength at a 50 nm feature size;

FIG. 13 is a table comparing orbit radius in nanometers, insidewavelength, and outside wavelength at a 100 nm feature size;

FIG. 14 is a table comparing orbit radius in nanometers, insidefrequency, outside frequency, and frequency bandwidth at a 10 nm featuresize;

FIG. 15 is a table comparing orbit radius in nanometers, insidefrequency, outside frequency, and frequency bandwidth at a 50 nm featuresize;

FIG. 16 is a table comparing orbit radius in nanometers, insidefrequency, outside frequency, and frequency bandwidth at a 100 nmfeature size;

FIG. 17 is a graph of the pulse response of an RCE Schottky photodiode;and

FIG. 18 is a graph of a saw tooth waveform showing the Fourier Transformcomponents superimposed.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

FIG. 1 is a representational view of an exemplary embodiment of anAutomatic Fourier Analyzer. In this exemplary embodiment, a number ofENLs 100 are shown in parallel. Each ENL comprises a transistor pair, asdiscussed below.

An output node 102 is provided for each ENL. Each output node produces avoltage at a specific frequency. Thus, as noted on the FIG. 1, the firstENL produces an output voltage at frequency f1; the second ENL producesan output voltage at frequency f2; and so on. The specifics of thefrequencies and voltages are discussed below. The other elements thatmake up the AFA circuit are end load 104, blinker 106, and an inputsignal 108. The input signal can come from any source; for example, acharge-coupled device (“CCD”), a microphone, or some other broadband ornarrowband signal source.

The frequency tuning of ENLs is “size” dependent in that physical andelectrical properties, for example, of the connectors (such as wires)affect the frequency response of the ENLs. For example, the connectorscoupling a pair of transistors in an ENL may be of a specific physicallength corresponding to the frequency band of interest. In addition orin the alternative, for example, the connectors may be of differentelectrical length corresponding to the frequency band of interest.

When an electromagnetic signal travels along input bus 110, itencounters ENLs 100 serially, i.e., one at a time. Thus, data, even ifit is in the form of a continuous pulse, activates the ENLs one by one.Because the ENLs are each a different “size,” each ENL accepts andtherefore draws energy from only that part of the signal that “fits” onit. Thus, only a certain frequency, which may or may not be presentwithin the makeup of the input signal, is diverted along the pathwayconnected to the particular ENL. The signal is therefore quantizedaccording to frequency (and, hence, according to wavelength). The firstENL encountered extracts a certain amount of energy at a particularfrequency from the original signal. The signal moves on encountering thesecond ENL. The second ENL then draws its activation energy from thesignal, only at a different frequency than the first. When the signalgets to the end of the line, each ENL has drawn a certain amount ofenergy from the signal, but not all the energy. There is some residualenergy left and end load 104 is used to bleed off the residual energy(and to prevent the back-propagation of reflected waves that may occurby simply terminating the input bus). End load 104 may comprise, forexample, a resistor or a resistor in parallel with a capacitor. Thevalue of the resistor and capacitor depends on the input and the totalenergy drain of the cumulative ENLs. The capacitor in parallel with theresistor stabilizes transistor operation.

The blinker 106 is another component of the circuit. The role of theblinker is to frame the input data in data transmission packets. In thisway, the AFA reads the framed input to produce a discreet Fourier codefor that frame. In this way, the AFA can handle complex waves withoutbecoming overloaded. This is also discussed in more detail below.

An AFA can be thought of as a form of “T” filter. It should be clearfrom the structure of an AFA that for a given signal input, the outputof the AFA—a series of current and/or voltage amplitudes at differentfrequencies—is a form of a Fourier series expansion of the inputfunction. This is because the AFA can automatically deliver as manyFourier series components as there are ENLs, whereas to duplicate thisperformance by calculation would require more and more separatecalculations. The details of this output and comparisons to actualFourier series expansions are discussed below. However, it is clearthat, depending on the number of ENLs used, the output of the AFA can beas good or better than a Fourier analysis done by calculation.

One element of the AFA circuit is the ENL. FIG. 2 is a schematic diagramof a first exemplary embodiment of an ENL. In this exemplary embodiment,ENL 100 comprises NPN transistor 112 and PNP transistor 114. Connector116 is coupled to the collectors of NPN transistor 112 and PNPtransistor 114, connector 118 is coupled to the bases of NPN transistor112 and PNP transistor 114, and connector 120 is coupled to the emittersof NPN transistor 112 and PNP transistor 114. ENL 100 further comprisesoutput nodes 102 and elements 122, 124, 126, 128, 130, and 132. FIG. 2also shows exemplary directions of current flow 134, 136, 138, 140, 142,144, 146, 148, 150, and 152.

FIGS. 3-5 are front perspective, top, and right-side views of a secondexemplary embodiment of an ENL, showing the first connector coupled tothe collectors of the two transistors and a second connector coupled tothe emitters of the two transistors. These figures are discussed below.Before the details of the circuit and transistor construction are given,we will describe fundamental transistor operating characteristics.

FIGS. 6-8 show parameter ranges that ENL transistors typically operatein, and are provided to help define notation. FIG. 6 is a diagram of anNPN-type transistor. FIG. 7 is a diagram of a PNP-type transistor. FIG.8 is a family of curves that shows the operating range of typicaltransistors in terms of collector current as a function of voltagedifference between the collector and emitter (V_(CE), V_(EC)) for thetwo types of transistors. The curves drawn on FIG. 8 are characteristiccurves used in the design of the ENL because they are standard andgeneric.

For the discussion at hand, we will note the direction of current flowinto and out of each type of transistor. The NPN transistor receivescurrent from both the base and the collector, then outputs the combinedcurrent at the emitter; the PNP transistor, on the other hand, receivescurrent only from the emitter, then outputs what amounts to a splitcurrent through the base and the collector. These particular operationalfeatures of the two types of transistors are used to devise the closedloop represented by an ENL circuit while at the same time providing anenergy balance between the total input and total output of the ENL.

Concerning the notation, terms like V_(CE) represent the differencebetween the voltage of the collector as opposed to the voltage of theemitter. The same is true of course for terms like V_(BE).Mathematically, V_(CE)≡V_(C)−V_(E), whereas V_(BE)≡V_(B)−V_(E), and soforth.

There are certain rules that govern the operation of any bipolartransistor. These rules of operation can be stated as follows.

For an NPN transistor, the voltage at the collector V_(C) should begreater than the voltage at the emitter V_(E)(V_(C)>V_(E)) by at least afew tenths of a volt. On the other hand, for a PNP transistor, theemitter voltage should be greater than the collector voltage(V_(E)>V_(C)) by a similar amount. (In either case the voltagedifferences establishes an electric field that serves as the impetus forthe direction of current flow).

For an NPN transistor there is a voltage drop from the base to theemitter of about 0.6 volts. For a PNP transistor, in contrast, there isa voltage rise of about 0.6 volts from the base to the emitter.

Transistors can amplify base current. This ability of the transistor isshown in FIG. 8. Various base currents are indicated at the right-mostportion of the FIG. 8. For a base current of 0.2 mA when V_(CE) orV_(EC)≈12 V, for example, the transistor amplifies the base current toabout 7.5 mA on the collector. This is an amplification factor of about37.5. This can be expressed by saying that I_(C)=βI_(B), where I_(C) isthe collector current, I_(B) is the base current and where β is thecurrent gain (so, in the foregoing example, β=37.5). The current gain isgiven in transistor specification tables. The current gain formulaapplies only if the above two rules are satisfied.

The above characteristics and rules may be mathematically summarized asfollows:I_(C)=βI_(B)(current gain equation restated)  Equation (1)I _(E) =I _(C) +I _(B)(conservation of charge)  Equation (2)

Combining these equations gives us an equation that relates emitter andbase currents (which is the counterpart of the first gain equation):I _(E) =βI _(B) +I _(B)=(β+1)I _(B)  Equation (3)

From the discussion above regarding the about 0.6 V changes:V _(BE) =V _(B) −V _(E)≈+0.6 V(NPN)  Equation (4)V _(BE) =V _(B) −V _(E)−0.6 V(PNP)  Equation (5)

Finally, the internal, inherently present resistance of a bipolartransistor is called the transresistance, r_(tr), and is suitablyexpressed as: $\begin{matrix}{r_{tr} = {{f(t)} = {k + {\frac{k}{2\pi^{2}}{\sum\limits_{n = {odd}}^{\infty}{\frac{1}{n^{2}}\cos\quad n\quad\omega\quad t}}}}}} & {{Equation}\quad(6)}\end{matrix}$

In most circuits, transresistance is negligible. However, because theENL is going to be designed in a somewhat non-ordinary way for anon-ordinary purpose, the transresistance may not be negligible.

FIG. 2 is a schematic diagram of the first exemplary embodiment of anENL. In this diagram, arbitrary values for voltages on the transistors(voltage is proportional to energy) have been selected for discussionpurposes. These voltages are in accord with the transistor rulesdiscussed above.

As shown, the collector of NPN transistor 112 is charged at +12 V. Inother words, V_(Cnpn)=12 V. A transistor behaves like an open switchunless there is a base current. That base current can be assured by alsosetting V_(Bnpn)=12 V. As discussed above, in an NPN transistor therewill be about a 0.6 V drop (caused by the depletion zone). That meansthat V_(Enpn)=11.4 V. Thus, an electric field (the pathway and impetusfor current flow) from the collector, through the base, and on to theemitter exists. The main NPN circuit is completed through element 128,which is used to set V_(Enpn).

Connector 120, coupled to the emitters of NPN transistor 112 and PNPtransistor 114, comprises at least some resistance. For this example,the resistance is such that V_(Enpn)=11.4 V is dropped to V_(Epnp)=11.3V. In that eventuality, current flow is assured from the emitter of NPNtransistor 112 to the emitter of PNP transistor 114. The 0.6 V dropdiscussed above results in V_(Bpnp)=10.7 V. Because connector 118 joinsthe two bases, and the base of NPN transistor 112 is already set at 12V, the resistance of connector 118 should be such that the voltage dropacross connector 118 is equal to 1.3 V. In turn, to assure an electricfield through to the PNP collector, the collector voltage is set toV_(Cpnp)=10.6 V. This last PNP circuit is completed through output node102, although another route can easily be provided if one wished.

We note that although the circuit is drawn so that current flows fromthe collector of PNP transistor 114 to the collector of NPN transistor112 (with the current arrow drawn in that direction), the voltagesdescribed above would be inappropriate for that purpose. This issue maybe addressed by the addition of, for example, a DC power supply(“DCPS”). In the exemplary embodiment of FIG. 2, the DCPS is shown aselements 130 and 132 using the circuit symbol for a battery. Thus, forexample, the voltage across element 130 may be 0.6 V and the voltageacross element 132 may also be 0.6 V. These two voltage sources are usedto increase voltage while not increasing current. Note that either ofthese voltage sources could be more or less than 0.6 V, depending on theparticular circuit design used. Also note that they represent anotherpath length on the ENL circuit. The current path with the additionalDCPS path length should remain an integer wavelength.

This addition of the DCPS boosts the voltage, thus assuring current flowas depicted in FIG. 2. The DCPS may be replaced, for example, by avoltage amplification circuit or other means for providing the neededvoltage.

In an exemplary embodiment, connectors 116 and 120 comprise semicircularor hemispherical paths. This is done to ensure that that there are onlytwo wavelengths present on the entire ENL orbit.

The rest of the circuit elements are chosen to “tune” the ENL to adesired frequency. This is done using the following analysis. In theexemplary embodiment of FIG. 2, elements 122 and 124 are capacitors suchthat element 122 comprises high capacitance and element 124 compriseslow capacitance. In combination with element 128, the effect is tocharge NPN transistor in such a way that no actual current flows. If thecapacitance of element 122 is made high enough (for example, in themicrofarad range), then the NPN collector is not influenced very muchwhen the superposed signal (such as that from a CCD) passes by. However,if at the same time the capacitance of element 124 is made low enough(for example, in the picofarad or nanofarad range), then element 124acts like a plain wire for the same signal. Then, during passage of aCCD data window, displacement current flows in NPN transistor 112. NPNtransistor 112 “turns on” to displacement current, but only during thepassage of the CCD data window. (Note that in this example, the entireENL circuit is enabled at all times the CCD is turned on).

To explain this desired level of current flow, we note that for elements122 and 124, the capacitor plate connected to the positive voltagesupply becomes positive. The bottom or transistor side of the capacitordraws negative current, electrons, from wherever is available until itis at, in effect, −12 V. That means that on the collector, there existsa situation in which the N-type material the collector is made from is+12 V from its normal electron-rich state. The NPN collector cannot drawelectrons from the circuits on the right side of FIG. 2 because there isno current flowing in the base of either NPN transistor 112 or PNPtransistor 114. In other words, these circuits are not complete.Likewise, in the quiescent state, the circuits on the left side of FIG.2 are not complete either, again because there is no current in the PNPbase and as a result, the battery or DCPS circuit is open.

However, when a data window passes by, some very rapid changes start tooccur. Because of the way the voltage changes in the data window, whenthe first spike of the data window just does hit element 122, everythinggets more positive. That positive change is reflected by a positivechange on the NPN collector, but because of the reactance of element 122the change is relatively small. On the other hand, immediatelythereafter, the data window then hits element 124. In element 124, thereactance is low so current flows essentially unimpeded. Additionally,base current now flows. This therefore activates the ENL and the ENL'squantization function.

The final step is picking a quiescent point, in our case a quiescentcurrent, for NPN transistor 112. The question now becomes what values ofcapacitance to choose for elements 122 and 124 in order to obtain thedesired results? It is well known that capacitive reactance is given bythe formula:X _(C) =V ₀ /I ₀=1/ωC  Equation (7)

-   -   where V₀ and I₀ are peak values and where co is the angular        frequency of the signal. X_(C) is measured in ohms.

For this example, assume the biasing voltage on the ENL matches thevoltage used by a CCD (i.e., about 12 V). If the CCD voltage-spikes areabout 12 mV in magnitude and positive then, for this example, V_(O)would be at most about 12.012 V.

For element 122, we would like the reactance to be high for a givenω(ω=ω₀). That reactance, however, should be set based on the frequencycomponents that are present in the input signal. To get at thatinformation, the CCD data window should be represented by a Fourierseries expansion. With such an expansion, the dominant frequencies thatmake up the CCD data window can be determined.

The function shown in FIG. 17 is representative of an individualvoltage-spike in a digital camera. FIG. 17 looks like a sharply peakedGaussian probability function. Therefore, for the purposes of thisexample, the function of FIG. 17 is represented as a Gaussianprobability distribution of the form:f(x)=Ne ^(−σx) ²   Equation (8)

The Fourier transform of that function is: $\begin{matrix}{{F(k)} = {N\sqrt{\frac{1}{2\sigma}}{\mathbb{e}}^{{{- k^{2}}/4}\sigma}}} & {{Equation}\quad(9)}\end{matrix}$

-   -   where the above functions have been centered on the origin;        where N, often taken as the normalization constant, is here        going to be taken as N=12 mV; σ is the standard deviation and        where ω is the angular frequency. F(k) is the distribution of        “frequencies.”

Note that according to FIG. 17, the full-width-at-half-maximum (“FWHM”),is 18 ps (picoseconds or 10⁻¹² sec). And, because FWHM=2.355 σ is astandard normal distribution relationship, 18 ps=2.355 σ, so thatσ=7.64×10⁻¹² sec.

To make the form of the above equations match the variables herein,there needs to be a substitution of variables according to the formulathat x=c_(i)t, where c_(i) is as usual the electronic speed in themedium and is taken to be 1.5×10⁸ m/s (constant). When making this kindof substitution, k also needs to be changed according to the formulak=ω/c_(i). Making this substitution gives us:f(t)=Ne ^(−σc) ² ^(t) ²   Equation (10) $\begin{matrix}{{F(\omega)} = {N\sqrt{\frac{1}{2\sigma}}{\mathbb{e}}^{{{- \omega^{2}}/4}\sigma\quad c^{4}}}} & {{Equation}\quad(11)}\end{matrix}$

-   -   where N and σ still refer to the original Gaussian parameters.

The above expressions are centered on the origin. The value of Equation(11) at ω=0 is given by the following expression${F(0)} = {N\sqrt{\frac{1}{2\sigma}}}$

-   -   where it is found that F(0)=3.0669×10³. In that case, half-max        is 1.5350×10³. Now the question becomes, what frequency        characterizes half-max. To answer that question use equation        (10), insert the value for half-max, then solve for ω.        ω=46.27×10¹⁰ Hz.  Equation (12)        Since ω=2πf,        f=7.37×10¹⁰ Hz.  Equation (13)

From Equation (11), one can calculate a for the transform Gaussian. And,at half-max, most of the nonthermal information in the CCD data windowhas been incorporated. Additionally, equation (13) demonstrates the sizeof the ENLs that should be used to build an AFA.

We note that Equation (12) gives a number for ω in the 10¹¹order-of-magnitude range. If that number is inserted into Equation (7),it produces:X _(C)=1/ωC=1/(C×10¹¹),

-   -   and, for C=10 pf, X_(C)=1 Ω, whereas for C=1 μf, X_(C)=10⁵ Ω.        Thus, the high frequency informational input associated with the        CCD photosites discharging will pass virtually unimpeded through        the picofarad capacitor, whereas the same window will encounter        a good deal of resistance to passage through the microfarad        capacitor. This then confirms the exemplary values of        capacitance for elements 122 and 124.

During the quiescent period, V_(Cnpn)=V_(Bnpn)=12.012 V≈12 V. Inaddition, when the data window hits, the NPN collector is only slightlyaffected but the NPN base current varies directly according to the inputsignal. From the above rules and equations governing the behavior oftransistors, Equation (4) can be applied to ascertain that V_(Enpn)≈11.4V. If it is assumed that the connector between the emitters of NPNtransistor 112 and PNP transistor 114 is of minimal resistance, thenV_(Epnp)=11.4 V. From Equation (5) we find that V_(Bpnp)=10.8 V.

Now if, in the circuit shown, the base of NPN transistor 112 is ≈12 Vand the base of the PNP transistor 114 is ≈10.8 V, then connector 118should have some significant resistance to reduce the voltage. The issuehere is that to make the base connector have that resistance, a resistorshould be inserted into the circuit or connector 118 should be doped insuch a way that it comprises that resistance.

The above description and examples show the basic principles involved inENL design. Of course, the circuit can be modified to handle anyparticular type of input wave and frequency components by performing thesame type of calculation above with the parameters changed to meet thenew operating characteristics.

In an exemplary embodiment, connectors 116, 118, and 120 compriseintegrated-circuit copper wiring. And, in the exemplary embodiment, theENLs may look like circles when viewed from above (see, e.g., FIG. 4).In particular, connector 118 joining the bases of NPN transistor 112 andPNP transistor 114 may be constructed in a semicircular fashion. Such aconstruction keeps the bases of NPN transistor 112 and PNP transistor114 appropriately in phase with each other, assuring proper operationand quantization of the circuit. Keeping in mind the quantizationfeature, an exemplary frequency range for operation of an AFA—with twotransistors in an ENL circuit with one wavelength per leg—should haveλ=πr. The frequency implied by this wavelength depends upon the mediumwithin which the wavelength is present, according to the standardformula, c_(i)=λf, where c_(i) is the ith medium velocity and where f isthe linear frequency.

FIGS. 9 and 10 are tables comparing, for given ENL orbit radii, impliedwavelength and frequency for two indicated media (using the shownelectronic speeds in those media).

Note that the first three entries in the first column of FIG. 9 aresomewhat unrealistic in that the values chosen for the ENL orbit radiiare the same as those that exemplify feature size in FIGS. 11-16.Despite this, even where the ENL orbit radius is as large as about 3micrometers (second-to-last entry in the second column), the impliedfrequency, being in the terahertz range, is much too high for currentlyavailable computers to handle. However, μm ENLs can handle terahertzfrequencies (if these are the signals, for example, output by a CCD), soAFAs comprising μm ENLs may serve as a substrate manifold.

In that case, the CCD output then would be in a form representative of aFourier series representation of what the CCD “sees.” In thateventuality, outgoing data may be serialized and slowed down to computerspeed from the original CCD/AFA speed. As for the framing of data, thatcan be accomplished electronically or by a movie-camera-type shuttersystem.

Many computer chips are currently constructed with a 130-nanometerfeature size. Feature size is, for example, the width of wires etched ona chip or the width of transistors on the chip. Many chip manufacturersare now moving toward smaller feature sizes, in one case to a featuresize of 65 nm. To illustrate the range of feature sizes for ENLs andAFAs, FIGS. 11 and 14 assume a feature size of 10 nm; FIGS. 12 and 15assume a feature size of 50 nm; and FIGS. 13 and 16 assume a featuresize of 100 nm.

An alternative construct is to insert an AFA between acomputer-speed-output CCD and a computer. This should require the ENLsof the AFA to be able to quantize signals at a much lower frequency thanthose indicated in FIG. 9.

FIG. 10 shows ENL orbit radii increased to macro-dimensions. From FIG.10, one may note that ENLs can quantize frequencies that can be handledby currently available computers only when the ENL orbit radius reachesthe centimeter-size range. This is an extremely large orbit radius ENLto have to produce in order to fit current computer-clock speed. But, itshould be understood that ENL orbit radius is also affected by theresistance of the connecting wires. That is, high-resistance wire meansthat the actual physical radius of the wires can be correspondinglysmaller. While one may build ENLs appropriately sized for microchipmanufacture by using conducting media with different resistance, thespeed of these ENLs will be slowed down accordingly. One shouldappreciate that this slowdown in ENL speed is relatively small incomparison to the times involved in the Fourier calculations associatedwith current analysis methods.

FIGS. 9 and 10 were developed using the quantization equation:2r=mnλ,m,nε{integers}|m≧2,n≧2,r=r _(in,) r _(out)  Equation (14)

In effect, the values given for the ENL radii are for theone-dimensional, ideal case. However, the connectors (such as, forexample, electronic or neural wires) involved in the making of an AFAcomprise a certain width or widths. What will be quantized on a givenENL is not a particular frequency, but a band of frequencies. This band,whether in terms of wavelength or frequency, may be calculated using aformula that gives the linear wavelength in terms of radius. Such aformula can be derived from the consideration that λ=(0.5)(ENL radius).This should assure that one wavelength “fits” on one leg of the ENLorbit. This mathematical notion may be expressed as λ=πr. Moregenerally, λ=zπr, where z is the number of wavelengths on one leg of theENL, considering an ENL made up of only two transistors.

If the geometry of FIGS. 3-5 is maintained, for an electromagnetic waveto be quantized on the offset toroidal ENL, at least one entirewavelength should be on each leg. If we concern ourselves only withtwo-transistor ENLs then, in Equation (14), m=2 and n=1, in which caseπr=λ and, in differential form, πdr=dλ.

For the case at hand, one may use πr=λ and FIG. 3 to calculate theallowable electromagnetic bandwidth. That is,ω(b−a)=(λ_(b)−λ_(a)  Equation (15)

-   -   where, from FIG. 3, (b−a) is recognized as the feature size.        Note that the dimension given as “h” in FIG. 3 does not appear        in these calculations. This is because of, first, the skin        effect, i.e., currents reside of the surface of a conductor and,        second, because the thickness of the conducting wire “h” can be        very much less than even the feature size.

Equation (15) can now be rewritten as:(λ_(b)−λ_(a))=π(feature size).  Equation (16)

Using once again the notation that c_(i)=electronic speed in the ithmedium, and that c_(i)=λf, Equation (16) may be used to solve for f_(b)(outside frequency) when f_(a) (inside frequency) is given, as in FIGS.9 and 14-16.f _(b) =c _(i) f _(a) /[c _(i) +πf _(a)(feature size)]  Equation (17)

Equations (15) and (16) are derived based on the geometry within which acomponent, or more accurately components, of an electromagnetic signalare diverted. If an ENL were not closed then, within the bounds ofcertain cable transmission restrictions, the ENL could carry the entirebandwidth of the incoming signal. However, the ENL is closed which meansthat certain wavelengths are quantized on the loop. Shorter or longerwavelengths than those to which the ENL has been tuned destructivelyinterfere with each other, meaning that the ENL allows energy to beextracted from the incoming signal only within the confines of a certainbandwidth. These bandwidths may be calculated using Equations (15),(16), and/or (17).

To complete this discussion of bandwidth, the radii given in FIGS. 9 and10 can be considered the inside radii, the distance “a” in FIG. 3. Inthat case, Equation (15) can be written as:λ_(b)=λ_(a)+π(feature size)  Equation (18)

Another table may now be constructed showing various wavelengths λ_(a)from FIGS. 9 and 10, along with the adopted feature sizes to demonstratewhat effect feature size has on bandwidth. In Equation (18), allmeasurements can be expressed in terms of nanometers. The results areshown in FIGS. 11-13. All entries shown in FIGS. 11-13 are thereforeexpressed in nanometers as well.

Note that the third, fourth, and fifth rows represent μm ENLs, asdiscussed above.

FIGS. 11-13 are rather simple in that the outside radius and, hence,outside wavelength of the ENL wire vary only according to a fixedadditive term. This term is proportional to the feature size, so smallerfeature size means less bandwidth, which in turn means more accuratequantization.

FIGS. 14-16 demonstrate this same principle for frequency. In FIGS.14-16, the quantity fa is taken from FIGS. 9 and 10. The quantitieslabeled as f_(b) are then calculated using Equation (17). The lastcolumn of FIGS. 14-16 gives the bandwidth in terms of frequency. Inthese tables, the third, fourth, and fifth row entries also correspondto the μm ENLs discussed above. From these last columns, we note that asfeature size goes down, frequency bandwidth and, thus, uncertainty godown as well.

The exact wiring diagram for the AFA for which FIG. 1 is arepresentational view is dependent on protocols that depend on thespecific purpose or purposes for the AFA and also on the input andoutput parameters. These may be considered and adopted when amanufacturer uses the AFA either as a part of some existing circuitry oras a stand-alone device.

To demonstrate how an AFA produces a Fourier series expansionautomatically, an example follows. In this example, it is not intendedto suggest that the AFA must return representatively characteristicoutputs. Instead, it is suggested that the AFA can returnrepresentatively characteristic outputs. For the purposes of thisexample, a saw tooth wave as shown in FIG. 18 will be used.

As discussed above, ENLs can be used in an AFA that can assign codes tothe graphical representation of the saw tooth function of FIG. 18. Thenthe code sets produced by the AFA and by hand will match. It should bestressed, however, that the theoretical calculation of the codes will bemathematically ideal whereas an AFA using a camera input will producecodes that are “fuzzy” owing to the fact that the ENL wires have afinite width and will, as a result, quantize a band of frequencies,albeit a very narrow band.

A full Fourier Series Representation (“FSR”) of the function depicted inFIG. 9 with symmetrical limits, with period T (where T=2π/ω) and withvariable t is given by (Butkov, E., Mathematical Physics, AddisonWesley, Reading, Mass., 1968, page 160), as $\left\{ {{\begin{matrix}{{f(t)} = {\frac{a_{0}}{2} + {\sum\limits_{n = 1}^{\infty}\left( {{a_{n}\cos\quad n\quad\omega\quad t} + {b_{n}\sin\quad n\quad\omega\quad t}} \right.}}} & {\quad(a)} \\{a_{n} = {\frac{\omega}{\pi}{\int_{{- \pi}/\omega}^{{+ \pi}/\omega}{{f(t)}\quad\cos\quad n\quad\omega\quad t\quad{\mathbb{d}t}}}}} & {\quad(b)} \\{a_{0} = {\frac{\omega}{\pi}{\int_{{- \pi}/\omega}^{{+ \pi}/\omega}{{f(t)}{\mathbb{d}t}}}}} & {\quad(c)}\end{matrix}\quad b_{n}} = {\frac{\omega}{\pi}{\int_{{- \pi}/\omega}^{{+ \pi}/\omega}{{f(t)}\sin\quad n\quad\omega\quad t{\mathbb{d}t}\quad(d)}}}}\quad \right.$

The function defined by the dark lines in FIG. 18 can be expressed alsoin point-intercept form. In general the function is:f(t)=mt+d

-   -   where m is the slope and d is the y-intercept. According to FIG.        18, the y-intercept is k in both cases. The slope of the line to        the left of the origin is (kω/2π), whereas on the right, the        slope is (−kω/2π).

Thus, to calculate a₀, then $\begin{matrix}{a_{0} = {\frac{\omega}{\pi}{\int_{{- \pi}/\omega}^{{+ \pi}/\omega}{{f(t)}{\mathbb{d}t}}}}} \\{a_{0} = {\frac{\omega}{\pi}\left\lbrack {{\int_{{- \pi}/\omega}^{0}{\left( {{k\quad\omega\quad{t/2^{1}}} + k} \right){\mathbb{d}t}}} + {\int_{0}^{t/\omega}{\left( {{{- k}\quad\omega\quad{t/2^{1}}} + k} \right){\mathbb{d}t}}}} \right\rbrack}} \\{a_{0} = {\frac{\omega}{\pi}\left\lbrack {{\left( {k\quad{\omega/2^{1}}} \right){\int_{{- \pi}/\omega}^{0}{t\quad{\mathbb{d}t}}}} + {k{\int_{{- \pi}/\omega}^{0}{\mathbb{d}t}}} - {k\quad{\omega/2^{1}}{\int_{0}^{t/\omega}{t{\mathbb{d}t}}}} + {\int_{0}^{t/\omega}{\mathbb{d}t}}} \right\rbrack}} \\{{a_{0} = {2k}},}\end{matrix}$whereas for a_(n), $\begin{matrix}{a_{n} = {{\frac{\omega}{\pi}\left\lbrack {{\left( {k\quad{\omega/2^{1}}} \right){\int_{{- \pi}/\omega}^{0}{t\quad\cos\quad\left( {n\quad\omega\quad t} \right){\mathbb{d}t}}}} + {k{\int_{{- \pi}/\omega}^{0}{\cos\quad\left( {n\quad\omega\quad t} \right){\mathbb{d}t}}}}} \right\rbrack} +}} \\{\frac{\omega}{\pi}\left\lbrack {{\left( {{- k}\quad{\omega/2^{1}}} \right){\int_{0}^{\pi/\omega}{t\quad\cos\quad\left( {n\quad\omega\quad t} \right){\mathbb{d}t}}}} + {k{\int_{0}^{\pi/\omega}{{\cos\left( {n\quad\omega\quad t} \right)}{\mathbb{d}t}}}}} \right\rbrack}\end{matrix}$

The second and fourth integrals, above, integrate to sines. When eitherlimit is inserted, these terms are zero. The first and third integrals,read$a_{n} = {\frac{k}{2}{\left( \frac{\omega}{\pi} \right)^{2}\left\lbrack {{\int_{{- \pi}/\omega}^{0}{t\quad\cos\quad\left( {n\quad\omega\quad t} \right){\mathbb{d}t}}} - {\int_{0}^{t/\omega}{t\quad\cos\quad\left( {n\quad\omega\quad t} \right){\mathbb{d}t}}}} \right\rbrack}}$

To integrate let u=nωt=>dt=du/(nω). Also, when t=0, u=0, and whent=±(π/ω), u=±πn.$a_{n} = {\frac{k}{2}\left( \frac{\omega}{\pi} \right)^{2}\left\{ {\left\lbrack {{\frac{1}{n^{2}\omega^{2}}\cos\quad u} - {\frac{u}{n\quad\omega}\sin\quad u}} \right\rbrack_{- n^{i}}^{0} - \left\lbrack {{\frac{1}{n^{2}\omega^{2}}\cos\quad u} - {\frac{u\quad}{n\quad\omega}\sin\quad u}} \right\rbrack_{0}^{n^{i}}} \right\}}$

The terms involving sin(u) are zero at the limits. This produces:$a_{n} = {\frac{k}{2}\left( \frac{1}{\pi} \right)^{2}\left\{ {\left\lbrack {\frac{1}{n^{2}}\cos\quad u} \right\rbrack_{- n^{i}}^{0} - \left\lbrack {\frac{1}{n^{2}}\cos\quad u} \right\rbrack_{0}^{n^{i}}} \right\}}$

When evaluated at the limits the above expression shows that a_(n)=0 forn=even; a_(n)=2k/π²n² for n=odd.

In a like fashion, b₀=0, whereas$b_{n} = {\frac{\omega}{\pi}{\int_{{- \pi}/\omega}^{{+ \pi}/\omega}{{f(t)}\sin\quad n\quad\omega\quad t\quad{\mathbb{d}t}}}}$becomes$b_{n} = {{\frac{\omega}{\pi}\left\lbrack {{\left( {k\quad{\omega/2^{1}}} \right){\int_{{- \pi}/\omega}^{0}{t\quad{\sin\left( {n\quad\omega\quad t} \right)}\quad{\mathbb{d}t}}}} + {k{\int_{{- \pi}/\omega}^{0}{{\sin\left( {n\quad\omega\quad t} \right)}\quad{\mathbb{d}t}}}}} \right\rbrack} + {\frac{\omega}{\pi}\left\lbrack {{\left( {{- k}\quad\omega\text{/}2\overset{\Cup}{s}} \right){\int_{0}^{\pi/\omega}{t\quad{\sin\left( {n\quad\omega\quad t} \right)}\quad{\mathbb{d}t}}}} + {k{\int_{0}^{/\omega}{{\sin\left( {n\quad\omega\quad t} \right)}\quad{\mathbb{d}t}}}}} \right\rbrack}}$

Again, let u=nωt=>dt=du/(nω). Also, when t=0, u=0, and when t±(π/ω),u=±πn. The integrals involving just the sin(u) terms integrate to zero.So, once again, the first and third integrals read$b_{n} = {\frac{k}{2}\left( \frac{\omega}{\pi} \right)^{2}\left\{ {\left\lbrack {{\frac{1}{n^{2}\omega^{2}}\sin\quad u} - {\frac{u}{n\quad\omega}\cos\quad u}} \right\rbrack_{- n^{\prime}}^{0} - \left\lbrack {{\frac{1}{n^{2}\omega^{2}}\sin\quad u} - {\frac{u}{n\quad\omega}\cos\quad u}} \right\rbrack_{0}^{n^{\prime}}} \right\}}$

Inserting the limits, the u cos(u) terms are zero at the zero limit,whereas the terms involving sin(u) are zero at the same limit. Thatleaves:$b_{n} = {\frac{k}{2}\left( \frac{\omega}{\pi} \right)^{2}\left\{ {\left\lbrack {\frac{\sin\quad u}{n^{2}\omega^{2}} - \frac{u\quad\cos\quad u}{n\quad\omega}} \right\rbrack_{- n^{\prime}} - \left\lbrack {\frac{\sin\quad u}{n^{2}\omega^{2}} - \frac{u\quad\cos\quad u}{n\quad\omega}} \right\rbrack^{n^{\prime}}} \right\}}$

Note that with the ±nπ limit, sin(u) is always zero. The u cos(u) terms,on the other hand, subtract out. So, b_(n)=0.

Finally, we can write the expression for the full FSR for thesymmetrical triangle depicted in FIG. 18 as: $\begin{matrix}{{f(t)} = {k + {\frac{2k}{\pi^{2}}{\sum\limits_{n = {odd}}^{\infty}\quad{\frac{1}{n^{2}}\cos\quad n\quad\omega\quad t}}}}} & {{Equation}\quad(19)}\end{matrix}$

From this expression, one may calculate which frequencies the ENLsshould be tuned to in order for the AFA camera to reproduce the Fouriercomponents as a unique code to accompany the picture.

When these are set and tuned, the AFA produces a set of analog outputsignals equal to a quantity at frequency −π/ω, a quantity at the zerofrequency point, and a quantity at frequency π/ω.

Other embodiments of the present invention will be apparent to thoseskilled in the art from consideration of this specification and practiceof the present invention disclosed in the specification. It is intendedthat the specification and examples in the specification be consideredas exemplary only, with the true scope and spirit of the presentinvention being indicated by the following claims.

1. An apparatus for detecting one or more spectral components in apredetermined frequency band within a signal, the apparatus comprising:a first processing device, comprising: a first element; a secondelement; and a third element; a second processing device, comprising: afourth element; a fifth element; and a sixth element; a first connectorcoupled to the first and fourth elements; a second connector coupled tothe second and fifth elements; and a third connector coupled to thethird and sixth elements; wherein each connector is tuned to thefrequency band.
 2. The apparatus of claim 1, wherein at least one of theprocessing devices comprises an electrochemical device.
 3. The apparatusof claim 1, wherein at least one of the processing devices comprises asemiconductor device.
 4. The apparatus of claim 1, wherein at least oneof the connectors comprises an ohmic connection.
 5. The apparatus ofclaim 1, wherein at least one of the connectors comprises a waveguide.6. The apparatus of claim 1, wherein at least one of the connectorscomprises an integrated circuit conducting connection.
 7. The apparatusof claim 1, wherein at least one of the connectors comprises anintegrated circuit semiconducting connection.
 8. The apparatus of claim3, wherein the semiconductor device comprises a transistor.
 9. Theapparatus of claim 3, wherein the semiconductor device comprises a fieldeffect transistor.
 10. The apparatus of claim 3, wherein thesemiconductor device comprises a complementary metal-oxidesemiconductor.
 11. The apparatus of claim 3, wherein the semiconductordevice comprises a bipolar junction transistor.
 12. The apparatus ofclaim 3, wherein the semiconductor device comprises an NPN transistor.13. The apparatus of claim 3, wherein the semiconductor device comprisesa PNP transistor.
 14. The apparatus of claim 1, wherein the firstprocessing device comprises an NPN transistor, and wherein the secondprocessing device comprises a PNP transistor.
 15. The apparatus of claim3, wherein the first element is a base of a transistor, wherein thesecond element is a collector of the transistor, and wherein the thirdelement is an emitter of the transistor.
 16. An apparatus for detectingone or more spectral components in a predetermined frequency band withinan input signal, the apparatus comprising: an input for receiving theinput signal; a first semiconductor device coupled to the input,comprising: a first element; a second element; and a third element; asecond semiconductor device coupled to the input, comprising: a fourthelement; a fifth element; and a sixth element; a first connector coupledto the first and fourth elements; a second connector coupled to thesecond and fifth elements; a third connector coupled to the third andsixth elements; and an output coupled to the first and secondsemiconductor devices; wherein each connector is tuned to the frequencyband, and wherein the output provides an output signal comprising anamplitude proportional to an amplitude of the one or more spectralcomponents.
 17. The apparatus of claim 16, wherein the output providesan output signal comprising a voltage proportional to a voltage of theone or more spectral components.
 18. The apparatus of claim 16, whereinthe output provides an output signal comprising a current proportionalto a current of the one or more spectral components.
 19. An apparatusfor analyzing one or more detected spectral components in predeterminedfrequency bands within an input signal, the apparatus comprising: aninput for receiving the input signal; a device coupled to the input forisolating a portion of the input signal extending over a discrete timeperiod; and a plurality of frequency detectors coupled in parallel tothe device; wherein each frequency detector corresponds to one of thefrequency bands, and wherein each frequency detector generates an outputsignal component corresponding to a proportion of energy of the spectralcomponent or components detected by the frequency detector to the totalenergy of the input signal portion.
 20. An apparatus for analyzing oneor more detected spectral components in predetermined frequency bandswithin an input signal, the apparatus comprising: an input for receivingthe input signal; a device coupled to the input for isolating a portionof the input signal extending over a discrete time period; and aplurality of frequency detectors coupled in parallel to the device;wherein at least two of the frequency detectors each correspond to atleast one spectral component of the input signal, and wherein each ofthe at least two frequency detectors generates an output signalcomponent corresponding to a proportion of energy of the spectralcomponent or components detected by the frequency detector of the totalenergy of the input signal portion.
 21. An apparatus for analyzing oneor more detected spectral components in predetermined frequency bandswithin an input signal, the apparatus comprising: an input for receivingthe input signal; a device coupled to the input for isolating a portionof the input signal extending over a discrete time period; and aplurality of frequency detectors coupled in parallel to the device;wherein at least two of the frequency detectors correspond to differingcomponents of the input signal, and wherein each frequency detectorgenerates an output signal component comprising an amplitudecorresponding to a proportion of energy of a corresponding input signalcomponent of the total energy of the input signal portion.
 22. Anapparatus for analyzing an input signal, the input signal comprisingmultiple components, each component corresponding to a frequency band,the apparatus comprising: an input for receiving the input signal; adevice coupled to the input for isolating a portion of the input signalextending over a discrete time period; a plurality of frequencydetectors coupled in parallel to the device; and an output devicecoupled to the frequency detectors; wherein each frequency detectorcorresponds to one of the input signal components, wherein eachfrequency detector generates an intermediate signal component comprisingan amplitude corresponding to the proportion of energy of thecorresponding input signal component to the total energy of the inputsignal portion, wherein the output device generates a code comprising aplurality of output signal components, and wherein each of the outputsignal components corresponds to one of the intermediate signalcomponents.
 23. An apparatus for analyzing detected spectral componentsin predetermined frequency bands within an input signal, comprising: aninput for receiving the input signal; a device coupled to the input forisolating a portion of the input signal extending over a discrete timeperiod; and a plurality of frequency detectors each coupled in parallelto the device; wherein each frequency detector corresponds to one of thefrequency bands, wherein each frequency detector comprises: a firstsemiconductor device, comprising: a first element; a second element; anda third element; a second semiconductor device, comprising: a fourthelement; a fifth element; and a sixth element; a first connector coupledto the first and fourth elements; a second connector coupled to thesecond and fifth elements; and a third connector coupled to the thirdand sixth elements; wherein each connector is tuned to a respectivefrequency band, and wherein each frequency detector generates an outputsignal component corresponding to a proportion of energy of the spectralcomponent or components detected by the frequency detector of the totalenergy of the input signal portion.
 24. A method for detecting one ormore spectral components in a predetermined frequency band within aninput signal, the method comprising: receiving the input signal;inputting the input signal to first and second processing devices; andoutputting an output signal from the first and second processingdevices; wherein the first processing device comprises: a first element;a second element; and a third element; wherein the second processingdevice comprises: a fourth element; a fifth element; and a sixthelement; wherein a first connector couples the first and fourthelements, wherein a second connector couples the second and fifthelements, wherein a third connector couples the third and sixthelements, wherein each connector is tuned to the frequency band, andwherein the output signal comprises one or more amplitudes eachproportional to an amplitude of the one or more spectral components. 25.The method of claim 24, wherein at least one of the processing devicescomprises an electrochemical device.
 26. The method of claim 24, whereinat least one of the processing devices comprises a semiconductor device.27. The method of claim 24, wherein at least one of the connectorscomprises an ohmic connection.
 28. The method of claim 24, wherein atleast one of the connectors comprises a waveguide.
 29. The method ofclaim 24, wherein at least one of the connectors comprises an integratedcircuit conducting connection.
 30. The method of claim 24, wherein atleast one of the connectors comprises an integrated circuitsemiconducting connection.
 31. The method of claim 26, wherein thesemiconductor device comprises a transistor.
 32. The method of claim 26,wherein the semiconductor device comprises a field effect transistor.33. The method of claim 26, wherein the semiconductor device comprises acomplementary metal-oxide semiconductor.
 34. The method of claim 26,wherein the semiconductor device comprises a bipolar junctiontransistor.
 35. The method of claim 26, wherein the semiconductor devicecomprises an NPN transistor.
 36. The method of claim 26, wherein thesemiconductor device comprises a PNP transistor.
 37. The method of claim24, wherein the first processing device comprises an NPN transistor, andwherein the second processing device comprises a PNP transistor.
 38. Themethod of claim 26, wherein the first element is a base of a transistor,wherein the second element is a collector of the transistor, and whereinthe third element is an emitter of the transistor.
 39. A method foranalyzing one or more detected spectral components in predeterminedfrequency bands within an input signal, comprising: receiving the inputsignal; inputting the input signal to a device for isolating a portionof the input signal extending over a discrete time period; passing theinput signal portion to a plurality of frequency detectors coupled inparallel to the device; and outputting an output signal from theplurality of frequency detectors; wherein each frequency detectorcomprises: a first semiconductor device, comprising: a first element; asecond element; and a third element; a second semiconductor device,comprising: a fourth element; a fifth element; and a sixth element; afirst connector coupling the first and fourth elements; a secondconnector coupling the second and fifth elements; and a third connectorcoupling the third and sixth elements; wherein each connector of a givenfrequency detector is tuned to a corresponding predetermined frequencyband, and wherein each frequency detector generates a component of theoutput signal corresponding to a proportion of energy of the spectralcomponent or components detected by the frequency detector of the totalenergy of the input signal portion.
 40. The method of claim 39, whereinthe output signal components comprise a voltage proportional to avoltage of the spectral component or components detected by thefrequency detector.
 41. The method of claim 39, wherein the outputsignal components comprise a current proportional to a current of thespectral component or components detected by the frequency detector. 42.A frequency filter, comprising: a first processing device, comprising: afirst element; a second element; and a third element; a secondprocessing device, comprising: a fourth element; a fifth element; and asixth element; a first connector coupled to the first and fourthelements; a second connector coupled to the second and fifth elements;and a third connector coupled to the third and sixth elements.
 43. Thefrequency filter of claim 42, wherein the first processing devicecomprises a first electrochemical device, and wherein the secondprocessing device comprises a second electrochemical device.
 44. Thefrequency filter of claim 42, wherein the first processing devicecomprises a first semiconductor device, and wherein the secondprocessing device comprises a second semiconductor device.
 45. Acomputer-readable medium for storing computer program code for executinga method for detecting one or more spectral components in apredetermined frequency band within an input signal, the methodcomprising: receiving the input signal; inputting the input signal tofirst and second processing devices; and outputting an output signalfrom the first and second processing devices; wherein the firstprocessing device comprises: a first element; a second element; and athird element; wherein the second processing device comprises: a fourthelement; a fifth element; and a sixth element; wherein a first connectorcouples the first and fourth elements, wherein a second connectorcouples the second and fifth elements, wherein a third connector couplesthe third and sixth elements, wherein each connector is tuned to thefrequency band, and wherein the output signal comprises at least oneamplitude proportional to an amplitude of the one or more spectralcomponents.
 46. A computer-readable medium for storing computer programcode for executing a method for analyzing one or more detected spectralcomponents in predetermined frequency bands within an input signal,comprising: receiving the input signal; inputting the input signal to adevice for isolating a portion of the input signal extending over adiscrete time period; passing the input signal portion to a plurality offrequency detectors coupled in parallel to the device; and outputting anoutput signal from the plurality of frequency detectors; wherein eachfrequency detector comprises: a first semiconductor device, comprising:a first element; a second element; and a third element; a secondsemiconductor device, comprising: a fourth element; a fifth element; anda sixth element; a first connector coupling the first and fourthelements; a second connector coupling the second and fifth elements; anda third connector coupling the third and sixth elements; wherein eachconnector of a given frequency detector is tuned to a correspondingpredetermined frequency band, and wherein each frequency detectorgenerates a component of the output signal corresponding to a proportionof energy of the spectral component or components detected by thefrequency detector of the total energy of the input signal portion. 47.A computer-readable medium for storing output of a method for detectingat least one spectral component in a predetermined frequency band withinan input signal, the method comprising: receiving the input signal;inputting the input signal to first and second processing devices; andoutputting an output signal from the first and second processingdevices; wherein the first processing device comprises: a first element;a second element; and a third element; wherein the second processingdevice comprises: a fourth element; a fifth element; and a sixthelement; wherein a first connector couples the first and fourthelements, wherein a second connector couples the second and fifthelements, wherein a third connector couples the third and sixthelements, wherein each connector is tuned to the frequency band, andwherein the output signal comprises at least one amplitude proportionalto an amplitude of the at least one spectral component.
 48. Thecomputer-readable medium of claim 47, wherein the stored output is inanalog form.
 49. The computer-readable medium of claim 47, wherein thestored output is in digital form.
 50. The computer-readable medium ofclaim 47, wherein the stored output comprises at least one digitizeddata word.
 51. A computer-readable medium for storing output of a methodfor analyzing one or more detected spectral components in predeterminedfrequency bands within an input signal, the method comprising: receivingthe input signal; inputting the input signal to a device for isolating aportion of the input signal extending over a discrete time period;passing the input signal portion to a plurality of frequency detectorscoupled in parallel to the device; and outputting an output signal fromthe plurality of frequency detectors; wherein each frequency detectorcomprises: a first semiconductor device, comprising: a first element; asecond element; and a third element; a second semiconductor device,comprising: a fourth element; a fifth element; and a sixth element; afirst connector coupling the first and fourth elements; a secondconnector coupling the second and fifth elements; and a third connectorcoupling the third and sixth elements; wherein each connector of a givenfrequency detector is tuned to a corresponding predetermined frequencyband, and wherein each frequency detector generates a component of theoutput signal corresponding to a proportion of energy of the spectralcomponent or components detected by the frequency detector of the totalenergy of the input signal portion.
 52. The computer-readable medium ofclaim 51, wherein the stored output is in analog form.
 53. Thecomputer-readable medium of claim 51, wherein the stored output is indigital form.
 54. The computer-readable medium of claim 51, wherein thestored output comprises at least one digitized data word.